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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3454
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER 2SK3454 PACKAGE Isolated TO-220
FEATURES
*Gate voltage rating 30 V *Low on-state resistance RDS(on) = 0.63 MAX. (VGS = 10 V, ID = 4.0 A) *Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) *Built-in gate protection diode *Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current(DC) (TC = 25C) Drain Current(pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
250 30 7.0 21 2.0 30 150 -55 to +150 7.0 49
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 125 V, RG = 25 , VGS = 20 V0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14756EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP (K) Printed in Japan
The mark 5 shows major revised points.
(c)
2000
2SK3454
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Drain Leakage Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Td(on) Tr Td(off) Tf QG QGS QGD VF(S-D) Trr Qrr VDD = 200 V VGS = 10 V ID = 7.0 A IF = 7.0 A, VGS = 0 V IF = 7.0 A, VGS = 0 V di/dt = 50 A/s Symbol Test Conditions VDS = 250 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 125 V, ID = 4.0 A VGS(on) = 10 V RG = 10 2.5 1.0 0.5 400 110 55 11 18 32 15 18 3.5 10 1.0 250 1.0 0.63 MIN. TYP. MAX. 100 10 4.5 Unit
A A
V S pF pF pF ns ns ns ns nC nC nC V ns
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS(on)
90%
IAS ID VDD
ID ID
Wave Form
0 10%
10%
= 1 s Duty Cycle 1%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D14756EJ2V0DS
2SK3454
TYPICAL CHARACTERISTICS
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30
100 10
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS Pulsed VDS = 10 V
ID - Drain Current - A
20
1 0.1 0.01 Tch = -25C 25C 75C 125C 150C
10
0.001
0
VGS =10 V Pulsed 0 10 20 30 40 50 60
0.0001 0 4 8 12 16 20 VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
5
VDS = 10 V ID = 1 mA
10
4
1 Tch = 150C 125C 75C 25C -25C
3
0.1
2
1 -50
0
50
100
150
0.01 0.01
0.1
1
VDS = 10 V Pulsed 10 100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3 Pulsed ID = 7.0 A 4.0 A 1.4 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 Pulsed VGS = 10 V
2
1
1
0
0
5
10
15
20
0 0.1
1
10
100
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D14756EJ2V0DS
3
2SK3454
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2 VGS = 10 V Pulsed ID = 7.0 A
100
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
1.5
10 VGS = 10 V 1 0V 0.1
1 4.0 A 0.5
0 -50
0
50
100
150
0.01 0
0.4
0.8
1.2
1.6
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
tr 100 td(off) tf 10 td(on)
1000 Ciss 100
Coss 10 0.1 1 10 100 Crss 1000
1 0.1
VDD = 125 V VGS = 10 V RG = 10
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000
trr - Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14
VDS - Drain to Source Voltage - V
12 250 200 150 100 50 0 0 5 10 QG - Gate Charge - nC VDS VDD = 200 V 125 V 50 V 10 VGS 8 6 4 2 ID = 7.0 A 15 0 20
100
10
1 0.1
di/dt = 50 A/s VGS = 0 V
1
10
100
ISD - Diode Forward Current - A
4
Data Sheet D14756EJ2V0DS
VGS - Gate to Source Voltage - V
2SK3454
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
40
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
100 80 60 40
PT - Total Power Dissipation - W
30
20
10
20 0 0 20 40 60 80
100
120 140 160
0 0
20
40
60
80
100 120 140 160
Tch - Channel Temperature - C
TC - Case Temperature - C
5
100
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
10
R VG (@
DS
) (on
ited Lim 0 V) =1 S
ID(pulse)
PW
=1 0
s
10 0
s
ID(DC)
Po we r
10 ms Di 0 ss ipa D ms tio C n Lim ite d
m s 3 10 ms
1
1
0.1
TC = 25C Single Pulse
1
10
100
1000
VDS - Drain to Source Voltage - V
5
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 62.5C/W
rth(t) - Transient Thermal Resistance - C/W
10 Rth(ch-C) = 4.17C/W 1
0.1
Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - sec
Data Sheet D14756EJ2V0DS
5
2SK3454
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Current - A
SINGLE AVALANCHE ENERGY DERATING FACTOR 120
Energy Derating Factor - %
VDD = 125 V RG = 25 VGS = 20 V 0 V IAS 7.0 A
100 80 60 40 20 0 25
10
IAS = 7.0 A
EAS
=4
9m
J
1
VDD = 125 V VGS = 20 V 0 V RG = 25 0.1 Starting Tch = 25C
0.01
0.1
1
10
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14756EJ2V0DS
2SK3454
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.00.3
3.20.2
4.50.2 2.70.2
EQUIVALENT CIRCUIT
15.00.3 30.1
Drain
12.00.2
Gate
Body Diode
40.2
13.5 MIN.
Gate Protection Diode
Source
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP.
2.50.1 0.650.1 1.Gate 2.Drain 3.Source
123
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Data Sheet D14756EJ2V0DS
7
2SK3454
* The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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